Last month, Qualcomm announced its latest Snapdragon 835 SoC processor which will be manufactured using the Samsung’s advanced 10nm FinFET process. At that time, the hasn’t announced any more details about this new processor, but it is mentioned to support Quick Charge 4.0 that will give 5 hours of battery life with just 5 minutes of charging. However, the rumors suggested this new Snapdragon processor to come with Adreno 540 GPU. Now the company is spotted on GFXbench benchmarking website revealing few more details. After the failure of the Snapdragon 810 processor, the company went to quad-core architecture using custom Kyro cores for the Snapdragon 820/821 SoC.
Though there rumors about the use of octa-core architecture for Snapdragon 835 SoC, now we can unofficially confirm the Snapdragon 835 SoC to be an octa-core processor. The Qualcomm’s development device using the Snapdragon 835 SoC is clocked at just 2.2GHz while the Snapdragon 821 SoC is clocked slightly higher at 2.35GHz. Few leaks also mentioned this processor to come clocked at 3.0GHz. The processor is also capable of recording in 4K resolution with both the front and rear cameras. In comparison with Snapdragon 820 SoC, the Snapdragon 835 SoC will offer 27% higher performance with 40% less power consumption.
With the 10nm size, the manufacturers will also get more space than the 14nm chipset. The Quick Charge 4.0 will be supported with this processor. An average smartphone battery can be charged from 0% to 50% in just 15 minutes using the Quick Charge 4.0 fast charging technology.This new technology will be charging 20% faster along with 30% higher efficiency than the Quick Charge 3.0 technology. Though there are no official details, the upcoming Samsung Galaxy S8, Galaxy S8 Edge, LG G6, and OPPO Find 9 are said to be powered by the Snapdragon 835 SoC. Since Qualcomm uses the Samsung’s 10nm manufacturing processor, we guess the Galaxy S8 devices to be first to use this new processor.
On the other hand, the MediaTek and Huawei are also getting ready to bring 10nm processor. While MediaTek already announced Helio X30 chipset, the upcoming Kirin 970 SoC from Huawei is also said to be manufactured using 10nm FinFET processor. Both the processors will be using TSMC’s 10nm FinFET process whereas the Qualcomm Snapdragon 835 SoC will be produced on Samsung 10nm FinFET process. Just after the Snapdragon 835 SoC is jointly announced by Qualcomm and Samsung, a lawsuit was filed in the U.S against the use of FinFET process.
The Korea Advanced Institute of Science and Technology (KAIST) alleges that Samsung is using their semiconductor manufacturing technology. Both the Samsung and Qualcomm along with Global Foundries are involved in this lawsuit. Samsung is mentioned to have copied the South Korean professor’s invention and hasn’t paid any royalties till date. Though the company will be looking for a settlement outside the court, more information can be expected in the next few days.